| PART |
Description |
Maker |
| M54562P M54562P/FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
|
| M63800FP |
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M54562P12 M54562P |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE 8个单00mA的源类型达林顿晶体管阵列钳位二极
|
Mitsubishi Electric Semiconductor
|
| M54581P |
S-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
From old datasheet system
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M63823FP M63823GP M63823P M63823P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| M54583 M54583P M54583PNBSP |
From old datasheet system
M54583P Darlington Transistor Array
8 UNIT 400MA DARLINGTON TRANSISTOR ARRAY
|
Mitsubishi Electric Corporation
Mitsubishi Electronics America Inc
Mitsubishi Electric Semiconductor
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| BA12003B BA12003BF BA12004B BA12001B BA12003B/BF |
Standard Linear LSIs > Transistor array
High voltage high current Darlington transistor array
High voltage, high current Darlington transistor array
From old datasheet system
|
ROHM[Rohm]
|
| BC817U |
General Purpose Transistors - NPN Silicon AF Transistor Array for AF input stages and drivers
NPN Silicon Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| UDN2981 UDN2981A UDN2982 UDN2982A UDN2982LW UDN298 |
(UDQ2981 - UDQ2984) 8-CHANNEL SOURCE DRIVERS
(UDN2981 - UDN2984) 8-CHANNEL SOURCE DRIVERS
8-CHANNEL SOURCE DRIVERS 8通道开源驱
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
| MAGX-000035-010000 MAGX-000035-01000S MAGX-000035- |
GaN on SiC HEMT Power Transistor Common-Source configuration
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
